A Charge Based Compact Modeling Technique for Monocrystalline TFTs on Glass

A thin-film monocrystalline CMOS display technology has been realized by implementing a conventional NMOS inversion device and a PMOS accumulation device. In this paper, a charge based modeling technique is introduced which provides the dc current-voltage characteristics for both inversion and accumulation devices. Since conduction occurs at the surface and in the bulk of accumulation devices, traditional charge sheet models are invalid. Starting directly from the Pao-Sah equation by applying the 1-D Gauss' Law, C-∞ expressions able to capture the effect of both surface and bulk conduction suitable for circuit simulations are derived. The model is validated against the two-dimensional device simulation.