Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching

Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching

Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared light ranges. The reflectance strongly depended on the surface morphology of the porous structures prepared by the electrochemical process, and the lowest reflectance of 0.1% in the visible light...

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Veröffentlicht in:ECS transactions 2010-04, Vol.25 (42), p.83-88
Hauptverfasser: Sato, Taketomo, Yoshizawa, Naoki, Okazaki, Hiroyuki, Hashizume, Tamotsu
Format: Artikel
Sprache:eng
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Zusammenfassung:Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared light ranges. The reflectance strongly depended on the surface morphology of the porous structures prepared by the electrochemical process, and the lowest reflectance of 0.1% in the visible light range was obtained from a sample after the irregular top layer was completely removed. Large anodic photocurrents were obtained on the InP porous structures that had low reflectance surfaces with deeper pores.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3416205