Effect of Postoxidation Annealing on High Temperature Grown SiO[sub 2]/4H-SiC Interfaces

Effect of Postoxidation Annealing on High Temperature Grown SiO[sub 2]/4H-SiC Interfaces

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Veröffentlicht in:Journal of the Electrochemical Society 2010, Vol.157 (2), p.H196
Hauptverfasser: Moon, Jeong Hyun, Yim, Jeong Hyuk, Seo, Han Seok, Lee, Do Hyun, Song, Ho Keun, Heo, Jaeyeong, Kim, Hyeong Joon, Cheong, Kuan Yew, Bahng, Wook, Kim, Nam-Kyun
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container_title Journal of the Electrochemical Society
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creator Moon, Jeong Hyun
Yim, Jeong Hyuk
Seo, Han Seok
Lee, Do Hyun
Song, Ho Keun
Heo, Jaeyeong
Kim, Hyeong Joon
Cheong, Kuan Yew
Bahng, Wook
Kim, Nam-Kyun
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doi_str_mv 10.1149/1.3267508
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title Effect of Postoxidation Annealing on High Temperature Grown SiO[sub 2]/4H-SiC Interfaces
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