High Thermal Stability AlGaAs/InGaAs Enhancement-Mode pHEMT Using Iridium Buried-Gate Technology

High Thermal Stability AlGaAs/InGaAs Enhancement-Mode pHEMT Using Iridium Buried-Gate Technology

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Veröffentlicht in:Journal of the Electrochemical Society 2009, Vol.156 (12), p.H877
Hauptverfasser: Chiu, Hsien-Chin, Yang, Chih-Wei, Chen, Chao-Hung, Lin, Che-Kai, Wang, Cheng-Shun, Fu, Jeffrey S.
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container_issue 12
container_start_page H877
container_title Journal of the Electrochemical Society
container_volume 156
creator Chiu, Hsien-Chin
Yang, Chih-Wei
Chen, Chao-Hung
Lin, Che-Kai
Wang, Cheng-Shun
Fu, Jeffrey S.
description
doi_str_mv 10.1149/1.3230675
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title High Thermal Stability AlGaAs/InGaAs Enhancement-Mode pHEMT Using Iridium Buried-Gate Technology
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