Pulsed MO CVD Processes of MgO Layer Deposition from Mg(thd) 2

Dipivaloylmethane was used as a precursor to deposit MgO layers on polished silicon (100) plane in a hot-wall pulsed MO CVD reactor. A detailed investigation of the thermal parameters of the precursor was carried out to optimize the conditions for film deposition experiments. Temperature dependencies of vapour pressure were measured using the flow procedure and Knudsen's method with the mass spectrometric identification of the composition of the gas phase. The processes of Mg(thd)2 decomposition in vacuum, in oxygen and in water vapour were investigated by means of high-temperature mass spectrometry. The major products of precursor decomposition were established; the mechanism of its decomposition was proposed. Investigation of the deposition of MgO layers was carried out within the substrate temperature range 350-450оС, source temperature 190÷210оC in the presence of oxygen. The resulting layers were characterized using AFM, ellipsometry, XRD. The morphology, structure and secondary electron emission of MgO films were investigated.