Effect of Ozone on Deposition of Silicon Oxide Films from Decamethylcyclopentasiloxane

The effect of ozone (O3) on gas phase composition and growth rate of silicon oxide films formed by atmospheric pressure thermal CVD in "decamethylcyclopentasiloxane (DMPSO)-oxygen-ozone" reaction system is described. The influence of process parameters on the growth rate and some properties of the deposited films is discussed. It was demonstrated that silicon oxide films with good dielectric properties can be deposited in the reaction system studied at relatively low temperatures of about 350 {degree sign}C and O3 /DMPSO partial pressure ratio of about 12.