Barium Titanate Thin Film Growth by Low-pressure Metalorganic Chemical Vapor Deposition

Barium titanate (BaTiO3) thin films were prepared from β-diketonate complexes as raw materials (on silicon substrates and into short quartz tubes) in the horizontal tubular hot-wall chemical vapor deposition reactor. The growth conditions, growth rate, and types of films grown were investigated. At high temperature (973 K), BaTiO3 could be prepared at concentrations equal to each of the metalorganic complexes, and its growth rate could be explained by summing the simple oxide growth rates because the growth rate of BaTiO3 is controlled by the mass transfer rate of the precursor. However, at low temperature (773 K), BaTiO3 could grow at a concentration of the Ti source that was richer than that of the Ba source because the growth rate of BaTiO3 is controlled by the rate of the chemical reaction and the Ti source reacts slower than the Ba source.