Annealing Reaction for Ni Silicidation of Si Nanowire

Annealing Reaction for Ni Silicidation of Si Nanowire

Silicidation of Si Nanowires (Si NWs) has been investigated in terms of the encroachment length of Ni silicide from the edge of exposed Si NWs. Ni silicides were formed by the reaction of Si NW and Ni layer by low temperature RTA processes.We also investigate Ni silicidation of Si NW using 2step ann...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Arai, Hideaki, Kamimura, Hideyuki, Sato, Soshi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Silicidation of Si Nanowires (Si NWs) has been investigated in terms of the encroachment length of Ni silicide from the edge of exposed Si NWs. Ni silicides were formed by the reaction of Si NW and Ni layer by low temperature RTA processes.We also investigate Ni silicidation of Si NW using 2step annealing process. The encroachment length of Ni silicide is dramatically suppressed for the 2 step annealing process.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3203982