Dynamics of Macropore Growth in n-type Silicon Investigated by FFT In-Situ Analysis

The dynamics of macropore growth in n-type silicon were investigated by in-situ FFT impedance spectroscopy and transient analysis. In particular the response to fast growing pores to current density steps in the context of so-called anti-phase diameter oscillations was investigated. These pore growth mode allows for a very fast growth of deep macropores and could for the first time be stimulated by external current steps.