High Temperature Ion Implantation: a Solution for n-Type Junctions in Strained Silicon

Elastic strain intentionally applied to thin layers can be reduced or even completely relaxed by amorphization during ion implantation. Sb implantation and activation in unstrained and strained-SOI substrates and effects on the crystal quality for different implantation conditions were investigated. Implantation induced amorphization can be avoided and simultaneously high dopant activation up to 55% can be achieved by implanting at elevated temperature. For a low implantation energy of 6 keV, no dopant profile broadening is measured after dynamic annealing in strained-SOI.