Millisecond Annealing Junctions for Near-Scaling-Limit Bulk CMOS Using Raised Source/Drain Extensions
This paper reviews an effective way to pursue further scaling of planar-bulk CMOSFETs featuring "effectively" shallow junctions in selective epitaxial growth of the raised source/drain extension(RSDext) regions processed with high-temperature millisecond annealing (MSA).
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| creator | Hane, Masami |
| description | This paper reviews an effective way to pursue further scaling of planar-bulk CMOSFETs featuring "effectively" shallow junctions in selective epitaxial growth of the raised source/drain extension(RSDext) regions processed with high-temperature millisecond annealing (MSA). |
| doi_str_mv | 10.1149/1.3118931 |
| format | Conference Proceeding |
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| fulltext | fulltext |
| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2009, Vol.19 (1), p.63-70 |
| issn | 1938-5862 1938-6737 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_3118931 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Millisecond Annealing Junctions for Near-Scaling-Limit Bulk CMOS Using Raised Source/Drain Extensions |
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