Millisecond Annealing Junctions for Near-Scaling-Limit Bulk CMOS Using Raised Source/Drain Extensions
This paper reviews an effective way to pursue further scaling of planar-bulk CMOSFETs featuring "effectively" shallow junctions in selective epitaxial growth of the raised source/drain extension(RSDext) regions processed with high-temperature millisecond annealing (MSA).
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | This paper reviews an effective way to pursue further scaling of planar-bulk CMOSFETs featuring "effectively" shallow junctions in selective epitaxial growth of the raised source/drain extension(RSDext) regions processed with high-temperature millisecond annealing (MSA). |
|---|---|
| ISSN: | 1938-5862 1938-6737 |
| DOI: | 10.1149/1.3118931 |