Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs

Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs

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Veröffentlicht in:Electrochemical and solid-state letters 2009, Vol.12 (2), p.H32
Hauptverfasser: Kuo, Yuan-Jui, Chang, Ting-Chang, Dai, Chin-Hao, Chen, Shih-Ching, Lu, Jin, Ho, Sz-Han, Chao, Chien-Hsiang, Young, Tai-Fa, Cheng, Osbert, Huang, Cheng-Tung
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container_title Electrochemical and solid-state letters
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creator Kuo, Yuan-Jui
Chang, Ting-Chang
Dai, Chin-Hao
Chen, Shih-Ching
Lu, Jin
Ho, Sz-Han
Chao, Chien-Hsiang
Young, Tai-Fa
Cheng, Osbert
Huang, Cheng-Tung
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doi_str_mv 10.1149/1.3023033
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title Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs
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