Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor

Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor

The electrical characteristics of epitaxially grown Fe3Si/Si structures were investigated. From the I-V and C-V measurements, excellent Schottky barrier characteristics (n=1.0, φn=0.62eV) were demonstrated. Moreover, the electrical characteristics did not deteriorate after post-annealing (400oC, 1h)...

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Hauptverfasser: Kishi, Yuji, Kumano, Mamoru, Ueda, Koji, Sadoh, Taizoh, Miyao, Masanobu
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The electrical characteristics of epitaxially grown Fe3Si/Si structures were investigated. From the I-V and C-V measurements, excellent Schottky barrier characteristics (n=1.0, φn=0.62eV) were demonstrated. Moreover, the electrical characteristics did not deteriorate after post-annealing (400oC, 1h), which guaranteed the thermal stability of Fe3Si/Si structures up to 400oC.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2986783