Strain Relaxation Induced Micro-Photoluminescence haracteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling
A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at ha...
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