Strain Relaxation Induced Micro-Photoluminescence haracteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling

Strain Relaxation Induced Micro-Photoluminescence haracteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling

A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at ha...

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Hauptverfasser: Chiu, ChingHua, Yu, Peichen, Chen, J.R, Yen, H. H., Kao, C.C., Kuo, H. C., Lu, T.C., Wang, S.C., Wu, Y.R., Yang, H.W., Yeh, W. Y.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2983169