Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxy of CeO2(100)/Si(100) Structures

Based on orientation selective epitaxy (OSE) of CeO2(100) and CeO2(110) layers on Si(100) substrates by substrate bias control in reactive magnetron sputtering, we have found OSE growth of CeO2(100) layers induced by electron beam irradiation, instead of substrate bias. In order to improve crystalline quality and interfacial properties, growth parameters of incident electron energy and an oxygen flow rate are analyzed, including the effect of oxygen radical beams. The electron beam induced OSE method gives a way to two dimensionally spatially varied OSE.