Film and Device Characteristics of Sputter-Deposited Hafnium Zirconate Gate Dielectric
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| Veröffentlicht in: | Journal of the Electrochemical Society 2008, Vol.155 (5), p.G121 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_issue | 5 |
| container_start_page | G121 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 155 |
| creator | Hegde, Rama I. |
| description | |
| doi_str_mv | 10.1149/1.2890855 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 2008, Vol.155 (5), p.G121 |
| issn | 0013-4651 |
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| source | IOP Publishing Journals |
| title | Film and Device Characteristics of Sputter-Deposited Hafnium Zirconate Gate Dielectric |
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