Fabrication of SOI MOSFET by Separation by Bonding Silicon Islands (SBSI) Method
Local SOI MOSFETs were fabricated in the designed area on a Si bulk substrate using the separation by bonding silicon islands (SBSI) method. We describe the key fabrication process technology and show the electrical characteristics. The SBSI method consists of three key technologies: epitaxial growt...
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Veröffentlicht in: | ECS transactions 2007-08, Vol.6 (4), p.309-313 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Local SOI MOSFETs were fabricated in the designed area on a Si bulk substrate using the separation by bonding silicon islands (SBSI) method. We describe the key fabrication process technology and show the electrical characteristics. The SBSI method consists of three key technologies: epitaxial growth of SiGe having high germanium concentration, lateral selective etching of SiGe, and bonding of buried oxides (BOX) grown in the gap. Epitaxial growth of 30 nm-thick Si0.63Ge0.37 without crystalline defects was achieved by reducing the growth temperature to as low as 450 ºC. The Si/Si0.63Ge0.37 structure allowed lateral etching of Si0.63Ge0.37 with a length of 1 mm in 2 minutes and with negligible etching of Si in a solution of hydrofluoric acid and nitric acid. Fabricated MOSFETs showed excellent characteristics, which were comparable to those of SOI wafers, although a small gap still remained in the BOX. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/1.2728875 |