Analysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

In this paper, we investigate and analyze the impact of the body potential on the performance enhancement of BC pMOSFET when the body contact is floating. Many geometries and layouts of PD SOI pMOSFET with 1.6 nm physical gate oxide have been compared. The body potential is mainly controlled by direct tunneling mechanism due to ECB current from the partial n+ poly- gate into the conduction band of the n type silicon substrate. Narrow device and H gate layout provide the highest Ion gain.