Defect Free Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices

Embedded Si1-y-zCyPz films selectively grown into recessed source drain areas of NFET devices has been shown to produce a tensile strained Silicon channel, which in turn enhances electron mobility and transistor performance [1]. In order to obtain and maintain high substitutional carbon levels during deposition/processing low growth temperatures and high growth rates (GR) have to be employed. Carbon substitutionality was demonstrated to be almost complete for Si0.97C0.02P0.01. Excellent crystalline quality was demonstrated on bare wafers by XRD. The absence of crystalline defects and perfect selectivity were confirmed by TEM and SEM on patterned 200 and 300 mm wafers.