DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties
DyScHfOx high-κ dielectric thin films have been grown by atomic vapor deposition using Dy(EDMDD)3, Sc(EDMDD)3, and Hf(OBut)2(mmp)2. It was found that the entire DyxScyHfzOw com-positional range can be realized with this process. XRD showed that DyScO3 was amorphous as grown, whereas ScHfOx and Dy-Hf...
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| Veröffentlicht in: | ECS transactions 2007-04, Vol.6 (1), p.113-120 |
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| container_title | ECS transactions |
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| creator | Adelmann, Christoph Van Elshocht, Sven Lehnen, Peer Conard, Thierry Franquet, Alexis Zhao, Chao Ragnarsson, Lars-Ake Chang, Vincent Cho, Hag-Ju Hong-Yu, Yu De Gendt, Stefan |
| description | DyScHfOx high-κ dielectric thin films have been grown by atomic vapor deposition using Dy(EDMDD)3, Sc(EDMDD)3, and Hf(OBut)2(mmp)2. It was found that the entire DyxScyHfzOw com-positional range can be realized with this process. XRD showed that DyScO3 was amorphous as grown, whereas ScHfOx and Dy-HfOx were crystalline. The crystalline phase of both HfxSc1-xOy and HfxDy1-xOy changed from monoclinic to cubic around x = 0.1. Electrical characterization of nMOS capacitors and long-channel transistors showed that the EOT-leakage scaling of DyScOx was comparable to that of HfO2, whereas both DyHfOx and ScHfOx were comparable to HfSiO4. For the DyScHfOx materials, the elec-tron mobility was improved with respect to devices with HfO2 as a gate dielectric. |
| doi_str_mv | 10.1149/1.2727394 |
| format | Article |
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It was found that the entire DyxScyHfzOw com-positional range can be realized with this process. XRD showed that DyScO3 was amorphous as grown, whereas ScHfOx and Dy-HfOx were crystalline. The crystalline phase of both HfxSc1-xOy and HfxDy1-xOy changed from monoclinic to cubic around x = 0.1. Electrical characterization of nMOS capacitors and long-channel transistors showed that the EOT-leakage scaling of DyScOx was comparable to that of HfO2, whereas both DyHfOx and ScHfOx were comparable to HfSiO4. 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| ispartof | ECS transactions, 2007-04, Vol.6 (1), p.113-120 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties |
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