DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties

DyScHfOx high-κ dielectric thin films have been grown by atomic vapor deposition using Dy(EDMDD)3, Sc(EDMDD)3, and Hf(OBut)2(mmp)2. It was found that the entire DyxScyHfzOw com-positional range can be realized with this process. XRD showed that DyScO3 was amorphous as grown, whereas ScHfOx and Dy-HfOx were crystalline. The crystalline phase of both HfxSc1-xOy and HfxDy1-xOy changed from monoclinic to cubic around x = 0.1. Electrical characterization of nMOS capacitors and long-channel transistors showed that the EOT-leakage scaling of DyScOx was comparable to that of HfO2, whereas both DyHfOx and ScHfOx were comparable to HfSiO4. For the DyScHfOx materials, the elec-tron mobility was improved with respect to devices with HfO2 as a gate dielectric.