The Influence of Ambient Temperature on the Forward-Bias Electrical Characteristics of p-n Heterojunction and Homojunction Interface
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| Veröffentlicht in: | Journal of the Electrochemical Society 2007, Vol.154 (5), p.H365 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_issue | 5 |
| container_start_page | H365 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 154 |
| creator | Tan, Shih-Wei |
| description | |
| doi_str_mv | 10.1149/1.2711076 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_2711076</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_2711076</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-db38ebb5ffb0efa17bd0b3dcb111f5489b848fe89d7ae10795bdeb33390a3fc33</originalsourceid><addsrcrecordid>eNpFkD1rwzAQhjW00PRj6D_Q2sGpLrJje0xD0gQCXdLZnKQTUbDlICmU7v3hVWig03HPezxwL2PPIKYAZfsK01kNIOr5DZsIAbIo5xXcsfsYj3mFpqwn7Gd_IL71tj-T18RHyxeDcuQT39NwooDpHDL2POW79Ri-MJjizWHkq550Ck5jz5cHDKgTBReT0_FiORWebyij8Xj2OrlsQG_4Zhz-wdbn3KKmR3ZrsY_0dJ0P7HO92i83xe7jfbtc7Ao9m7WpMEo2pFRlrRJkEWplhJJGKwCwVdm0qikbS01raqT8d1spQ0pK2QqUVkv5wF7-vDqMMQay3Sm4AcN3B6K7VNZBd61M_gLfxGNz</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The Influence of Ambient Temperature on the Forward-Bias Electrical Characteristics of p-n Heterojunction and Homojunction Interface</title><source>Institute of Physics Journals</source><creator>Tan, Shih-Wei</creator><creatorcontrib>Tan, Shih-Wei</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.2711076</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2007, Vol.154 (5), p.H365</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-db38ebb5ffb0efa17bd0b3dcb111f5489b848fe89d7ae10795bdeb33390a3fc33</citedby><cites>FETCH-LOGICAL-c229t-db38ebb5ffb0efa17bd0b3dcb111f5489b848fe89d7ae10795bdeb33390a3fc33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Tan, Shih-Wei</creatorcontrib><title>The Influence of Ambient Temperature on the Forward-Bias Electrical Characteristics of p-n Heterojunction and Homojunction Interface</title><title>Journal of the Electrochemical Society</title><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNpFkD1rwzAQhjW00PRj6D_Q2sGpLrJje0xD0gQCXdLZnKQTUbDlICmU7v3hVWig03HPezxwL2PPIKYAZfsK01kNIOr5DZsIAbIo5xXcsfsYj3mFpqwn7Gd_IL71tj-T18RHyxeDcuQT39NwooDpHDL2POW79Ri-MJjizWHkq550Ck5jz5cHDKgTBReT0_FiORWebyij8Xj2OrlsQG_4Zhz-wdbn3KKmR3ZrsY_0dJ0P7HO92i83xe7jfbtc7Ao9m7WpMEo2pFRlrRJkEWplhJJGKwCwVdm0qikbS01raqT8d1spQ0pK2QqUVkv5wF7-vDqMMQay3Sm4AcN3B6K7VNZBd61M_gLfxGNz</recordid><startdate>2007</startdate><enddate>2007</enddate><creator>Tan, Shih-Wei</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2007</creationdate><title>The Influence of Ambient Temperature on the Forward-Bias Electrical Characteristics of p-n Heterojunction and Homojunction Interface</title><author>Tan, Shih-Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-db38ebb5ffb0efa17bd0b3dcb111f5489b848fe89d7ae10795bdeb33390a3fc33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tan, Shih-Wei</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tan, Shih-Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Influence of Ambient Temperature on the Forward-Bias Electrical Characteristics of p-n Heterojunction and Homojunction Interface</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2007</date><risdate>2007</risdate><volume>154</volume><issue>5</issue><spage>H365</spage><pages>H365-</pages><issn>0013-4651</issn><doi>10.1149/1.2711076</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 2007, Vol.154 (5), p.H365 |
| issn | 0013-4651 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_2711076 |
| source | Institute of Physics Journals |
| title | The Influence of Ambient Temperature on the Forward-Bias Electrical Characteristics of p-n Heterojunction and Homojunction Interface |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T08%3A09%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20Influence%20of%20Ambient%20Temperature%20on%20the%20Forward-Bias%20Electrical%20Characteristics%20of%20p-n%20Heterojunction%20and%20Homojunction%20Interface&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Tan,%20Shih-Wei&rft.date=2007&rft.volume=154&rft.issue=5&rft.spage=H365&rft.pages=H365-&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.2711076&rft_dat=%3Ccrossref%3E10_1149_1_2711076%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |