A Kink-Free Bottom Gate Poly-Si Thin-Film Transistor with Smart Body Tie

A novel structure of bottom gate polysilicon thin-film transistor (TFT) with smart body tie is firstly investigated. Comparing with conventional bottom gate TFT, the simulation results derived from the well-known ISE-TCAD simulator have shown that the electrical characteristics are improved actually...

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Bibliographische Detailangaben
Hauptverfasser: Huang, Kuo Dong, Lin, Jyi-Tsong, Lin, Shih-Tsong
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
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Beschreibung
Zusammenfassung:A novel structure of bottom gate polysilicon thin-film transistor (TFT) with smart body tie is firstly investigated. Comparing with conventional bottom gate TFT, the simulation results derived from the well-known ISE-TCAD simulator have shown that the electrical characteristics are improved actually and greatly, such as the TFT's primary issue of kink effect is marvelously disappeared, the threshold voltage roll- off tendency is definitely suppressed.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2409018