Characterisation of High Temperature CVD Iron
The growth and analysis of iron thin films by low-pressure chemical vapor deposition (CVD) from a liquid source precursor iron pentacarbonyl (Fe(CO)5) is reported. The layers were deposited at 200-400C and 0.75 mbar on 100mm oxidised silicon substrates. Hydrogen was used as diluent gas. Layers betwe...
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| creator | Low, Yee Hooi Montgomery, John H. Gamble, Harold S. |
| description | The growth and analysis of iron thin films by low-pressure chemical vapor deposition (CVD) from a liquid source precursor iron pentacarbonyl (Fe(CO)5) is reported. The layers were deposited at 200-400C and 0.75 mbar on 100mm oxidised silicon substrates. Hydrogen was used as diluent gas. Layers between 120nm and 245nm were achieved for 20-minute process runs. Lower temperature layers were more porous. The resistivity of a 120nm thick layer deposited at 300C was 20 micro-ohm-cm. X- ray diffraction (XRD) analysis yielded peaks of α-Fe 110 & 200 body-centered-cubic (bcc) lattice. The highest magnetisation value was 1518emu/cm3 for the 300C layer. The lowest coercivity was 31Oe. Conformal coating of CVD Iron is demonstrated. |
| doi_str_mv | 10.1149/1.2408912 |
| format | Conference Proceeding |
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The layers were deposited at 200-400C and 0.75 mbar on 100mm oxidised silicon substrates. Hydrogen was used as diluent gas. Layers between 120nm and 245nm were achieved for 20-minute process runs. Lower temperature layers were more porous. The resistivity of a 120nm thick layer deposited at 300C was 20 micro-ohm-cm. X- ray diffraction (XRD) analysis yielded peaks of α-Fe 110 & 200 body-centered-cubic (bcc) lattice. The highest magnetisation value was 1518emu/cm3 for the 300C layer. The lowest coercivity was 31Oe. Conformal coating of CVD Iron is demonstrated.</abstract><doi>10.1149/1.2408912</doi><tpages>11</tpages></addata></record> |
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| ispartof | ECS transactions, 2007, Vol.2 (7), p.167-177 |
| issn | 1938-5862 1938-6737 |
| language | eng |
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| title | Characterisation of High Temperature CVD Iron |
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