1.5 S-Butyl 1.5 N-Butyl Bismuth and 1.5-Butyl 1.5-Isopropyl Bismuth as new Liquid Bismuth Precursors for SBT Thin Film Deposition

In this study, we have tested tributyl bismuth and, additionally, 1.5-butyl 1.5-isopropyl bismuth precursor in an atomic vapor deposition (AVD) system for SBT deposition. The Sr0.8-1Bi2-2.4Ta2O9 (SBT) thin films were deposited in a Tricent®-CVD reactor (AIXTRON AG) on Ir-coated 150 mm silicon (100) wafers. Strontium bis-pentaethoxymethoxyethoxy tantalate (Sr[Ta(OEt)5(OC2H4OMe)]2) was used as Sr-Ta source. Growth kinetics, structural and electrical properties of deposited films were investigated. The deposition rate for both bismuth precursors was almost the same and varied only depending on deposition temperature, pressure and injection parameters. The crystalline fluorite phase appeared at a higher deposition temperature (470-550 {degree sign}C). The SBT films annealed at 700 {degree sign}C were crystallized to the polycrystalline perovskite phase.