Formation of and Light Emission from Si Nanocrystals Embedded in Amorphous Silicon Oxides

The formation of Si-nc embedded in amorphous Si oxides promoted by thermal annealing of SiyO1-y films (y=0.34-0.45) fabricated by plasma enhanced chemical vapor deposition is examined by X- ray diffraction and electron microscopy. UV and synchrotron radiation excited photoluminescence from the obtai...

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Hauptverfasser: Comedi, David M., Zalloum, Othman, Blakie, Darren, Wojcik, Jacek, Mascher, Peter
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The formation of Si-nc embedded in amorphous Si oxides promoted by thermal annealing of SiyO1-y films (y=0.34-0.45) fabricated by plasma enhanced chemical vapor deposition is examined by X- ray diffraction and electron microscopy. UV and synchrotron radiation excited photoluminescence from the obtained structures is also studied and its origin elucidated
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2392914