Formation of and Light Emission from Si Nanocrystals Embedded in Amorphous Silicon Oxides
The formation of Si-nc embedded in amorphous Si oxides promoted by thermal annealing of SiyO1-y films (y=0.34-0.45) fabricated by plasma enhanced chemical vapor deposition is examined by X- ray diffraction and electron microscopy. UV and synchrotron radiation excited photoluminescence from the obtai...
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Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The formation of Si-nc embedded in amorphous Si oxides promoted by thermal annealing of SiyO1-y films (y=0.34-0.45) fabricated by plasma enhanced chemical vapor deposition is examined by X- ray diffraction and electron microscopy. UV and synchrotron radiation excited photoluminescence from the obtained structures is also studied and its origin elucidated |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/1.2392914 |