Electrical Characterization of Novel GaN Light Emitting Diodes with II-VI Quantum Dot Active Layers
In this work we present preliminary results of MOCVD grown n- GaN and MBE grown p-GaN p-n junctions on a sapphire substrate, with and without II-IV active layers. Circular transmission line method (CTLM) test structures were used to measure sheet resistance, contact resistance and to calculate resis...
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| creator | Patel, Kinnari N. Stokes, E. B. Pagan, Jennifer G. G. Burkhart, Casey C. Barletta, Phillip |
| description | In this work we present preliminary results of MOCVD grown n- GaN and MBE grown p-GaN p-n junctions on a sapphire substrate, with and without II-IV active layers. Circular transmission line method (CTLM) test structures were used to measure sheet resistance, contact resistance and to calculate resistivity of the p-GaN layer in both cases. Atomic force microscopy (AFM) was deployed to characterize the surface morphology of the p-type GaN. LED structures fabricated using standard methods were tested for IV characteristics and electroluminescence was demonstrated |
| doi_str_mv | 10.1149/1.2357237 |
| format | Conference Proceeding |
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| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2006, Vol.3 (5), p.457-462 |
| issn | 1938-5862 1938-6737 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_2357237 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Electrical Characterization of Novel GaN Light Emitting Diodes with II-VI Quantum Dot Active Layers |
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