Electrical Characterization of Novel GaN Light Emitting Diodes with II-VI Quantum Dot Active Layers

In this work we present preliminary results of MOCVD grown n- GaN and MBE grown p-GaN p-n junctions on a sapphire substrate, with and without II-IV active layers. Circular transmission line method (CTLM) test structures were used to measure sheet resistance, contact resistance and to calculate resistivity of the p-GaN layer in both cases. Atomic force microscopy (AFM) was deployed to characterize the surface morphology of the p-type GaN. LED structures fabricated using standard methods were tested for IV characteristics and electroluminescence was demonstrated