Study of the Impact of Electron Traps on GaN HEMT Reliability

In this paper, we will review work done at the Naval Research Laboratory that addresses GaN-based high electron mobility transistor (HEMT) reliability. Electron trapping effects are especially important in these wide bandgap devices, as they can limit microwave frequency performance and degrade reliability. We will review the utility of current collapse and gate lag measurements in characterizing nitride HEMT device performance. We will conclude with a discussion of the physical origin of these traps and work being done to reduce their density and mitigate their effects.