Deposition of Highly Crystallized Poly-Si Thin Films on Polymer Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150 {degree sign}C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2, and no inert gases such as He were used. A sh...

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Veröffentlicht in:	ECS transactions 2006-10, Vol.3 (8), p.119-124
Hauptverfasser:	Matsumoto, Mitsutaka, Suemitsu, Maki, Yara, Takuya, Setsuo, Nakajima, Tuyoshi, Uehara, Yasutake, Toyoshima, Syun, Itou
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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