Deposition of Highly Crystallized Poly-Si Thin Films on Polymer Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150 {degree sign}C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2, and no inert gases such as He were used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. By using this technique we have succeeded in growth of poly-Si thin film on the glass substrate at 180 {degree sign}C with virtually no incubation layers. Good crystallinity of the poly-Si thin films were observed by Raman scattering spectroscopy and cross-sectional transmission electron microscopy.