Iridium Silicide: a Promising Electrode for Metallic Source/Drain in Decananometer MOSFETs

A detailed study of the formation of iridium like silicide obtained on ultra high vacuum annealing and on rapid thermal annealing is proposed using x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and electrical characterizations. Using XPS analysis, the stochiometry of silicidation (IrSi, IrSi1.6) is identified. A very uniform IrSi layer obtained at low temperature gave a lower Schottky barrier height than a PtSi silicide. Lastly, the IrSix phase, obtained at 900{degree sign}C, proposed a very poor film quality.