Carbon Incorporation in SiGe Epi Films to Block Boron Diffusion

Carbon Incorporation in SiGe Epi Films to Block Boron Diffusion

This paper quantifies using Room Temperature Photoluminescence (PL) the substitutional carbon incorporation in SiGe epitaxial films at a function of the deposition temperature. Thanks to SIMS analysis, the better substitutional carbon incorporation at low deposition temperatures is shown to reduce t...

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Hauptverfasser: Deleglise, Florence, Dutartre, Didier, Talbot, Alexandre
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:This paper quantifies using Room Temperature Photoluminescence (PL) the substitutional carbon incorporation in SiGe epitaxial films at a function of the deposition temperature. Thanks to SIMS analysis, the better substitutional carbon incorporation at low deposition temperatures is shown to reduce the boron diffusion from SiGeC films.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2355804