Ultra-Thin (EOT ~ 0.31nm) and Low Leakage Dielectrics of La-Aluminate Deposited Directly on Si Substrate

Ultra-thin (0.31 nm) LaAlO3 gate dielectrics directly deposited on Si substrate were realized. We found that LaAlO3 deposition at substrate temperature of 700{degree sign}C led to low defect density of the film at the as-deposited state. The electron mobility of LaAlO3 n-MISFET was improved by formi...

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Bibliographische Detailangaben

Hauptverfasser:	Suzuki, Masamichi, Tomita, Mitsuhiro, Yamaguchi, Takeshi, Fukushima, Noburu, Koyama, Masato, Nishiyama, Akira
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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