Ultra-Thin (EOT ~ 0.31nm) and Low Leakage Dielectrics of La-Aluminate Deposited Directly on Si Substrate

Ultra-thin (0.31 nm) LaAlO3 gate dielectrics directly deposited on Si substrate were realized. We found that LaAlO3 deposition at substrate temperature of 700{degree sign}C led to low defect density of the film at the as-deposited state. The electron mobility of LaAlO3 n-MISFET was improved by forming gas annealing, meaning that the defects at the direct interface could be passivated with hydrogen.