Thin Film Silicon Solar Cells on ZnO/SnO 2 /Glass Substrate
Hydrogenated amorphous and microcrystalline silicon thin film solar cells were fabricated on ZnO/SnO2:F/glass structured substrate by transformer coupled plasma chemical vapor deposition(TCP-CVD) techniques. Asahi U-type glass (SnO2:F coated glass) widely used as a substrate for amorphous silicon th...
Gespeichert in:
Veröffentlicht in: | ECS transactions 2006-07, Vol.1 (30), p.11-14 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Hydrogenated amorphous and microcrystalline silicon thin film solar cells were fabricated on ZnO/SnO2:F/glass structured substrate by transformer coupled plasma chemical vapor deposition(TCP-CVD) techniques. Asahi U-type glass (SnO2:F coated glass) widely used as a substrate for amorphous silicon thin film solar cells has a critical problem to be reduced in H2 plasma. In this research, we investigated the effects of ZnO thin films used as a reduction barrier on the characteristics of solar cells by varing the thickness of ZnO films on Asahi U-type glass. The I-V characteristics of Al/n/i/p/ZnO/SnO2/glass structured (called the 'superstrate' configuration) solar cells were measured at AM1.5, 100 mW/cm2 and Voc (open circuit voltage), Jsc (short cuicuit current density), FF (fill factor), Eff (efficiency) of these cells were calculated. |
---|---|
ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/1.2209376 |