ALD Precursor Development: Challenges, Opportunities and Managing Uncertainty
The challenges associated with producing next generation sub- nanometer films to meet conformality requirements on complex topographies and to improve semiconductor device performance characteristics have resulted in the consideration of a myriad of new materials, methods of deposition, and integrat...
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Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The challenges associated with producing next generation sub- nanometer films to meet conformality requirements on complex topographies and to improve semiconductor device performance characteristics have resulted in the consideration of a myriad of new materials, methods of deposition, and integration strategies. For many applications it has become apparent that atomic layer deposition (ALD) will become the method of choice for depositing films. Adoption of this technology is well underway for applications with aggressive architectures such as DRAM capacitors and electrodes, and it appears imminent for copper interconnect cladding applications. The time will soon come when every semiconductor device has at least one film that is generated by ALD. During the talk, an example of how Praxair has approached precursor development for interconnect barrier and seed applications will be illustrated, and how we have used a diverse series of learnings during development to benefit the ALD community at large. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/1.2209334 |