Oxygen‐Doped Molybdenum Films for MOS Gate Application
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| Veröffentlicht in: | Journal of the Electrochemical Society 1984-02, Vol.131 (2), p.446-450 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 450 |
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| container_issue | 2 |
| container_start_page | 446 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 131 |
| creator | Ohfuji, Shin‐ichi Hashimoto, Chisato Amazawa, Takao Murota, Junichi |
| description | |
| doi_str_mv | 10.1149/1.2115602 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1984-02, Vol.131 (2), p.446-450 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_2115602 |
| source | IOP Publishing Journals |
| title | Oxygen‐Doped Molybdenum Films for MOS Gate Application |
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