The Plasma Etching of Polysilicon with CF 3Cl / Argon Discharges: I . Parametric Modeling and Impedance Analysis
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| Veröffentlicht in: | Journal of the Electrochemical Society 1986-11, Vol.133 (11), p.2315-2325 |
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| Sprache: | eng |
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| container_end_page | 2325 |
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| container_issue | 11 |
| container_start_page | 2315 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 133 |
| creator | Allen, Kenneth D. Sawin, Herbert H. Mocella, Michael T. Jenkins, Mary W. |
| description | |
| doi_str_mv | 10.1149/1.2108400 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1986-11, Vol.133 (11), p.2315-2325 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_2108400 |
| source | IOP Publishing Journals |
| title | The Plasma Etching of Polysilicon with CF 3Cl / Argon Discharges: I . Parametric Modeling and Impedance Analysis |
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