Growth rate of doped and undoped silicon by ultra-high vacuum chemical vapor deposition
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| Veröffentlicht in: | Journal of the Electrochemical Society 1991-06, Vol.138 (6), p.1744-1748 |
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| container_end_page | 1748 |
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| container_issue | 6 |
| container_start_page | 1744 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 138 |
| creator | GREVE, D. W RACANELLI, M |
| description | |
| doi_str_mv | 10.1149/1.2085865 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1991-06, Vol.138 (6), p.1744-1748 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_2085865 |
| source | IOP Publishing Journals |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Growth rate of doped and undoped silicon by ultra-high vacuum chemical vapor deposition |
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