Substrate Trenching Mechanism during Plasma and Magnetically Enhanced Polysilicon Etching

Substrate Trenching Mechanism during Plasma and Magnetically Enhanced Polysilicon Etching

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Veröffentlicht in:Journal of the Electrochemical Society 1991-04, Vol.138 (4), p.1112-1117
Hauptverfasser: Van Nguyen, Son, Dobuzinsky, Dave, Stiffler, Scott R., Chrisman, Greg
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Sprache:eng
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container_issue 4
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container_title Journal of the Electrochemical Society
container_volume 138
creator Van Nguyen, Son
Dobuzinsky, Dave
Stiffler, Scott R.
Chrisman, Greg
description
doi_str_mv 10.1149/1.2085726
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title Substrate Trenching Mechanism during Plasma and Magnetically Enhanced Polysilicon Etching
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