Indium tin oxide dry etching using HBr gas for thin-film transistor liquid crystal displays

Indium tin oxide dry etching using HBr gas for thin-film transistor liquid crystal displays

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Veröffentlicht in:Journal of the Electrochemical Society 1995-07, Vol.142 (7), p.2470-2473
Hauptverfasser: TAKABATAKE, M, WAKUI, Y, KONISHI, N
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Sprache:eng
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Applied sciences
Display
Electronics
Exact sciences and technology
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container_end_page 2473
container_issue 7
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container_title Journal of the Electrochemical Society
container_volume 142
creator TAKABATAKE, M
WAKUI, Y
KONISHI, N
description
doi_str_mv 10.1149/1.2044322
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identifier ISSN: 0013-4651
ispartof Journal of the Electrochemical Society, 1995-07, Vol.142 (7), p.2470-2473
issn 0013-4651
1945-7111
language eng
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source IOP Publishing Journals
subjects Applied sciences
Display
Electronics
Exact sciences and technology
title Indium tin oxide dry etching using HBr gas for thin-film transistor liquid crystal displays
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