Influence of Silicon Nitride Passivation on DC and RF Characteristics of 0.1 μm Pseudomorphic HEMTs

Influence of Silicon Nitride Passivation on DC and RF Characteristics of 0.1 μm Pseudomorphic HEMTs

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Veröffentlicht in:Journal of the Electrochemical Society 2005, Vol.152 (4), p.G266
Hauptverfasser: Oh, Jung-Hun, Sul, Woo-Suk, Rhee, Jin-Koo, Kim, Sam-Dong
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container_issue 4
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container_title Journal of the Electrochemical Society
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creator Oh, Jung-Hun
Sul, Woo-Suk
Rhee, Jin-Koo
Kim, Sam-Dong
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doi_str_mv 10.1149/1.1864772
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title Influence of Silicon Nitride Passivation on DC and RF Characteristics of 0.1 μm Pseudomorphic HEMTs
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