Oxygen vacancies in SiO2 layers on Si produced at high temperature

Oxygen vacancies in SiO2 layers on Si produced at high temperature

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Veröffentlicht in:Journal of the Electrochemical Society 1998-09, Vol.145 (9), p.3157-3160
Hauptverfasser: AFANAS'EV, V. V, STESMANS, A, REVESZ, A. G, HUGHES, H. L
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 3160
container_issue 9
container_start_page 3157
container_title Journal of the Electrochemical Society
container_volume 145
creator AFANAS'EV, V. V
STESMANS, A
REVESZ, A. G
HUGHES, H. L
description
doi_str_mv 10.1149/1.1838779
format Article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_1838779</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2392870</sourcerecordid><originalsourceid>FETCH-LOGICAL-c237t-ad2acb16106b4e1eb229af3dee3d212d93de3c3e180bdfc42878dd59de5acc213</originalsourceid><addsrcrecordid>eNo9j8tOwzAURC0EEqGw4A-8YMMixdfOw15CxUuqlAWwjm7smzYoTSI7RfTvSdSK1cxIMyMdxm5BLAES8wBL0ErnuTljEZgkjXMAOGeREKDiJEvhkl2F8D1F0Ekesafi97Chjv-gxc42FHjT8Y-mkLzFA_nA-znywfdub8lxHPm22Wz5SLuBPI57T9fsosY20M1JF-zr5flz9Ravi9f31eM6tlLlY4xOoq0gA5FVCQFVUhqslSNSToJ0ZrLKKgItKlfbROpcO5caRylaK0Et2P3x1_o-BE91Ofhmh_5Qgihn-BLKE_zUvTt2BwwW29rPcOF_IJWZ7oX6AzNQWNM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Oxygen vacancies in SiO2 layers on Si produced at high temperature</title><source>Institute of Physics Journals</source><creator>AFANAS'EV, V. V ; STESMANS, A ; REVESZ, A. G ; HUGHES, H. L</creator><creatorcontrib>AFANAS'EV, V. V ; STESMANS, A ; REVESZ, A. G ; HUGHES, H. L</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1838779</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of the Electrochemical Society, 1998-09, Vol.145 (9), p.3157-3160</ispartof><rights>1998 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c237t-ad2acb16106b4e1eb229af3dee3d212d93de3c3e180bdfc42878dd59de5acc213</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=2392870$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>AFANAS'EV, V. V</creatorcontrib><creatorcontrib>STESMANS, A</creatorcontrib><creatorcontrib>REVESZ, A. G</creatorcontrib><creatorcontrib>HUGHES, H. L</creatorcontrib><title>Oxygen vacancies in SiO2 layers on Si produced at high temperature</title><title>Journal of the Electrochemical Society</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNo9j8tOwzAURC0EEqGw4A-8YMMixdfOw15CxUuqlAWwjm7smzYoTSI7RfTvSdSK1cxIMyMdxm5BLAES8wBL0ErnuTljEZgkjXMAOGeREKDiJEvhkl2F8D1F0Ekesafi97Chjv-gxc42FHjT8Y-mkLzFA_nA-znywfdub8lxHPm22Wz5SLuBPI57T9fsosY20M1JF-zr5flz9Ravi9f31eM6tlLlY4xOoq0gA5FVCQFVUhqslSNSToJ0ZrLKKgItKlfbROpcO5caRylaK0Et2P3x1_o-BE91Ofhmh_5Qgihn-BLKE_zUvTt2BwwW29rPcOF_IJWZ7oX6AzNQWNM</recordid><startdate>19980901</startdate><enddate>19980901</enddate><creator>AFANAS'EV, V. V</creator><creator>STESMANS, A</creator><creator>REVESZ, A. G</creator><creator>HUGHES, H. L</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980901</creationdate><title>Oxygen vacancies in SiO2 layers on Si produced at high temperature</title><author>AFANAS'EV, V. V ; STESMANS, A ; REVESZ, A. G ; HUGHES, H. L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c237t-ad2acb16106b4e1eb229af3dee3d212d93de3c3e180bdfc42878dd59de5acc213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>AFANAS'EV, V. V</creatorcontrib><creatorcontrib>STESMANS, A</creatorcontrib><creatorcontrib>REVESZ, A. G</creatorcontrib><creatorcontrib>HUGHES, H. L</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>AFANAS'EV, V. V</au><au>STESMANS, A</au><au>REVESZ, A. G</au><au>HUGHES, H. L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxygen vacancies in SiO2 layers on Si produced at high temperature</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1998-09-01</date><risdate>1998</risdate><volume>145</volume><issue>9</issue><spage>3157</spage><epage>3160</epage><pages>3157-3160</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1838779</doi><tpages>4</tpages></addata></record>
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issn 0013-4651
1945-7111
language eng
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source Institute of Physics Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Oxygen vacancies in SiO2 layers on Si produced at high temperature
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T23%3A04%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Oxygen%20vacancies%20in%20SiO2%20layers%20on%20Si%20produced%20at%20high%20temperature&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=AFANAS'EV,%20V.%20V&rft.date=1998-09-01&rft.volume=145&rft.issue=9&rft.spage=3157&rft.epage=3160&rft.pages=3157-3160&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.1838779&rft_dat=%3Cpascalfrancis_cross%3E2392870%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true