Electrical characterization of thin SiO2 films on silicon created by anodic oxygen corona discharge processing

Electrical characterization of thin SiO2 films on silicon created by anodic oxygen corona discharge processing

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Veröffentlicht in:Journal of the Electrochemical Society 1998-08, Vol.145 (8), p.2937-2943
Hauptverfasser: SAYEDI, S. M, LANDSBERGER, L. M, KAHRIZI, M, BELKOUCH, S, LANDHEER, D
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 2943
container_issue 8
container_start_page 2937
container_title Journal of the Electrochemical Society
container_volume 145
creator SAYEDI, S. M
LANDSBERGER, L. M
KAHRIZI, M
BELKOUCH, S
LANDHEER, D
description
doi_str_mv 10.1149/1.1838740
format Article
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1945-7111
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source Institute of Physics Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Electrical characterization of thin SiO2 films on silicon created by anodic oxygen corona discharge processing
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