Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation

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Veröffentlicht in:	Journal of the Electrochemical Society 1998-07, Vol.145 (7), p.2523-2529
Hauptverfasser:	SHIMIZU, H, ISOMAE, S, MINOWA, K, SATOH, T, SUZUKI, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Linear defects: dislocations, disclinations Physics Structure of solids and liquids crystallography
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container_end_page	2529
container_issue	7
container_start_page	2523
container_title	Journal of the Electrochemical Society
container_volume	145
creator	SHIMIZU, H ISOMAE, S MINOWA, K SATOH, T SUZUKI, T
description
doi_str_mv	10.1149/1.1838672
format	Article
fullrecord	<record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_1838672</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2300534</sourcerecordid><originalsourceid>FETCH-LOGICAL-c322t-3b011b25e3c8dc48c348a2996042292a3f5b716a8fa811e1b1e6ff2fc9c62c6b3</originalsourceid><addsrcrecordid>eNo9kE9LxDAUxIMouK4e_AY5ePGQtS9J0_Qoi67CghcFb-U1TdZI_5G0Si9-duvu4ml4zPyGxxByDckKQOZ3sAIttMr4CVlALlOWAcApWSQJCCZVCufkIsbP-QQtswX52QT88gMOvmuxpnEINkbm22o0tqKVj3Vn9makvqU1hp1llcfGDjbQ6GtvupZ-o7MhzvBY-ZkqJ_rOAk506PpuF7D_mCi2FTVd048HrhnrfeslOXNYR3t11CV5e3x4XT-x7cvmeX2_ZUZwPjBRzv-WPLXC6MpIbYTUyPNcJZLznKNwaZmBQu1QA1gowSrnuDO5UdyoUizJ7aHXhC7GYF3RB99gmApIir_hCiiOw83Zm0O2x2iwdgFb4-M_wEWSpEKKX8EDb-I</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation</title><source>IOP Publishing Journals</source><creator>SHIMIZU, H ; ISOMAE, S ; MINOWA, K ; SATOH, T ; SUZUKI, T</creator><creatorcontrib>SHIMIZU, H ; ISOMAE, S ; MINOWA, K ; SATOH, T ; SUZUKI, T</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1838672</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Exact sciences and technology ; Linear defects: dislocations, disclinations ; Physics ; Structure of solids and liquids; crystallography</subject><ispartof>Journal of the Electrochemical Society, 1998-07, Vol.145 (7), p.2523-2529</ispartof><rights>1998 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-3b011b25e3c8dc48c348a2996042292a3f5b716a8fa811e1b1e6ff2fc9c62c6b3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27926,27927</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2300534$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SHIMIZU, H</creatorcontrib><creatorcontrib>ISOMAE, S</creatorcontrib><creatorcontrib>MINOWA, K</creatorcontrib><creatorcontrib>SATOH, T</creatorcontrib><creatorcontrib>SUZUKI, T</creatorcontrib><title>Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation</title><title>Journal of the Electrochemical Society</title><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Exact sciences and technology</subject><subject>Linear defects: dislocations, disclinations</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LxDAUxIMouK4e_AY5ePGQtS9J0_Qoi67CghcFb-U1TdZI_5G0Si9-duvu4ml4zPyGxxByDckKQOZ3sAIttMr4CVlALlOWAcApWSQJCCZVCufkIsbP-QQtswX52QT88gMOvmuxpnEINkbm22o0tqKVj3Vn9makvqU1hp1llcfGDjbQ6GtvupZ-o7MhzvBY-ZkqJ_rOAk506PpuF7D_mCi2FTVd048HrhnrfeslOXNYR3t11CV5e3x4XT-x7cvmeX2_ZUZwPjBRzv-WPLXC6MpIbYTUyPNcJZLznKNwaZmBQu1QA1gowSrnuDO5UdyoUizJ7aHXhC7GYF3RB99gmApIir_hCiiOw83Zm0O2x2iwdgFb4-M_wEWSpEKKX8EDb-I</recordid><startdate>19980701</startdate><enddate>19980701</enddate><creator>SHIMIZU, H</creator><creator>ISOMAE, S</creator><creator>MINOWA, K</creator><creator>SATOH, T</creator><creator>SUZUKI, T</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980701</creationdate><title>Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation</title><author>SHIMIZU, H ; ISOMAE, S ; MINOWA, K ; SATOH, T ; SUZUKI, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-3b011b25e3c8dc48c348a2996042292a3f5b716a8fa811e1b1e6ff2fc9c62c6b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Exact sciences and technology</topic><topic>Linear defects: dislocations, disclinations</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SHIMIZU, H</creatorcontrib><creatorcontrib>ISOMAE, S</creatorcontrib><creatorcontrib>MINOWA, K</creatorcontrib><creatorcontrib>SATOH, T</creatorcontrib><creatorcontrib>SUZUKI, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SHIMIZU, H</au><au>ISOMAE, S</au><au>MINOWA, K</au><au>SATOH, T</au><au>SUZUKI, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1998-07-01</date><risdate>1998</risdate><volume>145</volume><issue>7</issue><spage>2523</spage><epage>2529</epage><pages>2523-2529</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1838672</doi><tpages>7</tpages></addata></record>
fulltext	fulltext
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issn	0013-4651 1945-7111
language	eng
recordid	cdi_crossref_primary_10_1149_1_1838672
source	IOP Publishing Journals
subjects	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Linear defects: dislocations, disclinations Physics Structure of solids and liquids crystallography
title	Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T07%3A59%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Gravitational%20stress-induced%20dislocations%20in%20large-diameter%20silicon%20wafers%20studied%20by%20X-ray%20topography%20and%20computer%20simulation&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=SHIMIZU,%20H&rft.date=1998-07-01&rft.volume=145&rft.issue=7&rft.spage=2523&rft.epage=2529&rft.pages=2523-2529&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.1838672&rft_dat=%3Cpascalfrancis_cross%3E2300534%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true