Interface states distribution in electrical stressed oxynitrided gate-oxide
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Veröffentlicht in: | Journal of the Electrochemical Society 1998-07, Vol.145 (7), p.2489-2493 |
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container_issue | 7 |
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container_title | Journal of the Electrochemical Society |
container_volume | 145 |
creator | BELKOUCH, S NGUYEN, T. K LANDSBERGER, L. M AKTIK, C JEAN, C KAHRIZI, M |
description | |
doi_str_mv | 10.1149/1.1838666 |
format | Article |
fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_1838666</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2360633</sourcerecordid><originalsourceid>FETCH-LOGICAL-c216t-2d64aced955861b06cee8aac9b9371b10375ca838e681830a50a22b3c19c8b823</originalsourceid><addsrcrecordid>eNo9UMFKAzEUDKLgWj34B3vw4iE1L9lkk6MUrcWCFz0vSfatRNbdkkRo_95Ii6c3b5h5jxlCboEtARrzAEvQQiulzkgFppG0BYBzUjEGgjZKwiW5SumrrKCbtiKvmyljHKzHOmWbMdV9SDkG95PDPNVhqnFEXwhvx6KImBL29bw_TKGQfcGfxUXnfcHX5GKwY8Kb01yQj-en99UL3b6tN6vHLfUcVKa8V0351xsptQLHlEfU1nrjjGjBAROt9LakQKVLGGYls5w74cF47TQXC3J_vOvjnFLEodvF8G3joQPW_bXQQXdqoWjvjtqdTSXCEO3kQ_o3cKGYEkL8AtDKXFg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Interface states distribution in electrical stressed oxynitrided gate-oxide</title><source>IOP Publishing Journals</source><creator>BELKOUCH, S ; NGUYEN, T. K ; LANDSBERGER, L. M ; AKTIK, C ; JEAN, C ; KAHRIZI, M</creator><creatorcontrib>BELKOUCH, S ; NGUYEN, T. K ; LANDSBERGER, L. M ; AKTIK, C ; JEAN, C ; KAHRIZI, M</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1838666</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Testing, measurement, noise and reliability</subject><ispartof>Journal of the Electrochemical Society, 1998-07, Vol.145 (7), p.2489-2493</ispartof><rights>1998 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2360633$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>BELKOUCH, S</creatorcontrib><creatorcontrib>NGUYEN, T. K</creatorcontrib><creatorcontrib>LANDSBERGER, L. M</creatorcontrib><creatorcontrib>AKTIK, C</creatorcontrib><creatorcontrib>JEAN, C</creatorcontrib><creatorcontrib>KAHRIZI, M</creatorcontrib><title>Interface states distribution in electrical stressed oxynitrided gate-oxide</title><title>Journal of the Electrochemical Society</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Testing, measurement, noise and reliability</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNo9UMFKAzEUDKLgWj34B3vw4iE1L9lkk6MUrcWCFz0vSfatRNbdkkRo_95Ii6c3b5h5jxlCboEtARrzAEvQQiulzkgFppG0BYBzUjEGgjZKwiW5SumrrKCbtiKvmyljHKzHOmWbMdV9SDkG95PDPNVhqnFEXwhvx6KImBL29bw_TKGQfcGfxUXnfcHX5GKwY8Kb01yQj-en99UL3b6tN6vHLfUcVKa8V0351xsptQLHlEfU1nrjjGjBAROt9LakQKVLGGYls5w74cF47TQXC3J_vOvjnFLEodvF8G3joQPW_bXQQXdqoWjvjtqdTSXCEO3kQ_o3cKGYEkL8AtDKXFg</recordid><startdate>19980701</startdate><enddate>19980701</enddate><creator>BELKOUCH, S</creator><creator>NGUYEN, T. K</creator><creator>LANDSBERGER, L. M</creator><creator>AKTIK, C</creator><creator>JEAN, C</creator><creator>KAHRIZI, M</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980701</creationdate><title>Interface states distribution in electrical stressed oxynitrided gate-oxide</title><author>BELKOUCH, S ; NGUYEN, T. K ; LANDSBERGER, L. M ; AKTIK, C ; JEAN, C ; KAHRIZI, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c216t-2d64aced955861b06cee8aac9b9371b10375ca838e681830a50a22b3c19c8b823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Testing, measurement, noise and reliability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BELKOUCH, S</creatorcontrib><creatorcontrib>NGUYEN, T. K</creatorcontrib><creatorcontrib>LANDSBERGER, L. M</creatorcontrib><creatorcontrib>AKTIK, C</creatorcontrib><creatorcontrib>JEAN, C</creatorcontrib><creatorcontrib>KAHRIZI, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BELKOUCH, S</au><au>NGUYEN, T. K</au><au>LANDSBERGER, L. M</au><au>AKTIK, C</au><au>JEAN, C</au><au>KAHRIZI, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interface states distribution in electrical stressed oxynitrided gate-oxide</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1998-07-01</date><risdate>1998</risdate><volume>145</volume><issue>7</issue><spage>2489</spage><epage>2493</epage><pages>2489-2493</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1838666</doi><tpages>5</tpages></addata></record> |
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identifier | ISSN: 0013-4651 |
ispartof | Journal of the Electrochemical Society, 1998-07, Vol.145 (7), p.2489-2493 |
issn | 0013-4651 1945-7111 |
language | eng |
recordid | cdi_crossref_primary_10_1149_1_1838666 |
source | IOP Publishing Journals |
subjects | Applied sciences Electronics Exact sciences and technology Testing, measurement, noise and reliability |
title | Interface states distribution in electrical stressed oxynitrided gate-oxide |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T16%3A21%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Interface%20states%20distribution%20in%20electrical%20stressed%20oxynitrided%20gate-oxide&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=BELKOUCH,%20S&rft.date=1998-07-01&rft.volume=145&rft.issue=7&rft.spage=2489&rft.epage=2493&rft.pages=2489-2493&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.1838666&rft_dat=%3Cpascalfrancis_cross%3E2360633%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |