Conducting and charge-trapping defects in buried oxide layers of SIMOX structures
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| Veröffentlicht in: | Journal of the Electrochemical Society 1996, Vol.143 (1), p.347-352 |
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| container_end_page | 352 |
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| container_issue | 1 |
| container_start_page | 347 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 143 |
| creator | AFANAS'EV, V. V BROWN, G. A HUGHES, H. L LIU, S. T REVESZ, A. G |
| description | |
| doi_str_mv | 10.1149/1.1836434 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1996, Vol.143 (1), p.347-352 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_1836434 |
| source | Institute of Physics Journals |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Conducting and charge-trapping defects in buried oxide layers of SIMOX structures |
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